Computer Simulation of Boundary Condition for Schottky Barrier Diodes

Document Type

Article - Merrimack Access Only

Publication Title

Electronics Letters

Publication Date


Abstract/ Summary

A computer simulation of a GaAs Schottky barrier diode has been carried out, using a combination of a drift-diffusion equation solver and a Monte Carlo program. In contrast to previous similar reports, the authors found that a variable boundary condition is required, at least when the opposing barrier allows a Monte Carlo simulation to be accurately utilised.