Monte Carlo Simulation of Noise in GaAs at Electric Fields up to the Critical Field
Document Type
Article - Merrimack Access Only
Publication Title
IEEE Electron Device Letters
Publication Date
7-1992
Abstract/ Summary
Monte Carlo noise calculations using a method based on the Ramo-Schockley theorem were carried out for n-type homogeneous GaAs under a variety of conditions. Classical Nyquist noise results were reproduced for resistors at both 77 and 300 K. The method was used to model noise at 300 K at fields up to the critical field, and the results compare favorably with those found experimentally. An alternative method for determining the intervalley coupling constant by using noise temperature data is described, and the results using this method suggest the value of the intervalley coupling constant approximately=0.5*10/sup 9/ eV-cm/sup -1/.<>
Repository Citation
Adams, J.,
&
Tang, T.
(1992). Monte Carlo Simulation of Noise in GaAs at Electric Fields up to the Critical Field. IEEE Electron Device Letters, 13(7), 378-380.
Available at: https://scholarworks.merrimack.edu/een_facpub/6
