Monte Carlo Simulation of Noise in GaAs Semiconductor Devices

Document Type

Article - Merrimack Access Only

Publication Title

IEEE Transactions on Electron Devices

Publication Date


Abstract/ Summary

The Monte Carlo method has been used to calculate the noise in GaAs resistors where finite-size effects are important, being from 0.5 to 1.5 μm in length. The results agree qualitatively with experimental noise measurements performed on similar devices. Monte Carlo noise calculations have also been conducted for Schottky barrier diodes. A method for conducting full-device Monte Carlo simulations of these diodes has been employed. Schottky barrier diodes with both 0.12 and 1.0 μm epitaxial layers were modeled, and the calculated noise is in agreement with experiment throughout a wide range of bias voltages, both when shot noise and when excess noise predominate. Two different methods of calculating the noise current have been compared.