Computer Simulation of Boundary Condition for Schottky Barrier Diodes
Article - Merrimack Access Only
A computer simulation of a GaAs Schottky barrier diode has been carried out, using a combination of a drift-diffusion equation solver and a Monte Carlo program. In contrast to previous similar reports, the authors found that a variable boundary condition is required, at least when the opposing barrier allows a Monte Carlo simulation to be accurately utilised.
(1989). Computer Simulation of Boundary Condition for Schottky Barrier Diodes. Electronics Letters, 25(16), 1098-1100.
Available at: http://scholarworks.merrimack.edu/een_facpub/7